A.G Cullis, R Beanland
With IC technology continuing to advance, the analysis of very small structures remains critically important. Microscopy of Semiconducting Materials provides an overview of advances in semiconductor studies using microscopy. The book explores the use of transmission and scanning electron microscopy, ultrafine electron probes, and EELS to investigate semiconducting structures. It also covers specimen preparation using focused ion beam milling and advances in microscopy techniques using different types of scanning probes, such as AFM, STM, and SCM. In addition, the book discusses a range of materials, from finished devices to partly processed materials and structures, including nanoscale wires and dots.
This volume provides an authoritative reference for all academics and researchers in materials science, electrical and electronic engineering and instrumentation, and condensed matter physics.
With IC technology continuing to advance, the analysis of very small structures remains critically important. Microscopy of Semiconducting Materials provides an overview of advances in semiconductor studies using microscopy. The book explores the use of transmission and scanning electron microscopy, ultrafine electron probes, and EELS to investigate semiconducting structures. It also covers specimen preparation using focused ion beam milling and advances in microscopy techniques using different types of scanning probes, such as AFM, STM, and SCM. In addition, the book discusses a range of materials, from finished devices to partly processed materials and structures, including nanoscale wires and dots.This volume provides an authoritative reference for all academics and researchers in materials science, electrical and electronic engineering and instrumentation, and condensed matter physics.
High resolution microscopy and microanalysis (10 papers). Dislocations and boundaries (9 papers). Self-organized and quantum domain structures (14 papers) . Epitaxy-growth phenomena (22 papers). Epitaxy-defect formation (16 papers). Epitaxy-wide band-gap nitrides (20 papers). Processed silicon and related materials (24 papers). Metallization, silicides and contacts (9 papers). Device studies and specimen preparation (7 papers). Scanning probe microscopy (6 papers). Advanced scanning electron and optical microscopy (20 papers).
Microscopy of Semiconducting Materials provides an overview of advances in semiconductor studies using microscopy. This authoritative reference explores the use of transmission and scanning electron microscopy, ultrafine electron probes, and EELS to investigate semiconducting structures. It also covers specimen preparation using focused ion beam milling and advances in microscopy techniques using different types of scanning probes, such as AFM, STM, and SCM. In addition, the volume discusses a range of materials, from finished devices to partly processed materials and structures, including nanoscale wires and dots.
Presents an overview of advances in semiconductor studies using microscopy. This book explores the use of transmission and scanning electron microscopy, ultra fine electron probes, and EELS to investigate semi conducting structures. It is suitable for academics and researchers in materials science, and electrical and electronic engineering.
Über den Autor
A.G Cullis, R Beanland
Inhaltsverzeichnis
High resolution microscopy and microanalysis (10 papers). Dislocations and boundaries (9 papers). Self-organized and quantum domain structures (14 papers) . Epitaxy-growth phenomena (22 papers). Epitaxy-defect formation (16 papers). Epitaxy-wide band-gap nitrides (20 papers). Processed silicon and related materials (24 papers). Metallization, silicides and contacts (9 papers). Device studies and specimen preparation (7 papers). Scanning probe microscopy (6 papers). Advanced scanning electron and optical microscopy (20 papers).
Klappentext
This volume provides an overview of advances in semiconductor studies using microscopy. It contains invited reviews and summary research papers from the Microscopy of Semiconducting Materials conference held in Oxford in 1999. With IC technology continuing to advance, the analysis of very small structures remains critically important. The conference covers the use of transmission and scanning electron microscopy, ultrafine electron probes and EELS to investigate these structures, specimen preparation using focused ion beam milling and advances in microscopy techniques using different types of scanning probe (AFM, STM, SCM). It reports on studies of materials from finished devices to partly processed materials and structures including nanoscale wires and dots. It provides an authoritative reference for all academics and researchers in materials science, electrical and electronic engineering, instrumentation and condensed matter physics.
