First book to connect missing link between semiconductor device engineers/designers and process engineers, material designers, and chemists
First book solely dedicated to the application of ALD to the semiconductor/microelectronics fields
Written by top experts in the field
Cheol Seong Hwang received M.S. and Ph.D. degrees from Seoul National University, Seoul, Korea, in 1989 and 1993, respectively. In 1993, he joined the Material Science and Engineering Laboratory at the National Institutes of Standards and Technology, Gaithersburg, MD, as a Postdoctoral Research Fellow. He then joined Samsung Electronics Company, Ltd., as a Senior Researcher in 1994. In 1998, Dr. Hwang became a professor in the department of material science and engineering at Seoul National University. He has authored or coauthored more than 380 papers in international peer-reviewed scientific journals, which have been cited more than 7,500 times.Dr. Hwang was a recipient of the Alexander von Humboldt Fellowship Award, the 7th Presidential Young Scientist Award of the Korean government, and Faculty Excellent Award of Air Products, USA.
Offering thorough coverage of atomic layer deposition (ALD), this book moves from basic chemistry of ALD and modeling of processes to examine ALD in memory, logic devices and machines. Reviews history, operating principles and ALD processes for each device.
I.IntroductionChapter 1. Introduction; Cheol Seong Hwang and Cha Young Yoo (Seoul National University and Samsung)II.FundamentalsChapter 2 . ALD Precursors and Reaction mechanism ; Roy Gordon (Harvard)Chapter 3 . ALD simulations; Simon Elliott (Tyndall)III.ALD for memory devicesChapter 4 . ALD for mass-production memories (DRAM and Flash); Cheol Seong Hwang, Seong Keun Kim, and Sang Woon Lee (SNU)III-2. ALD for emerging memories Chapter 5 . PcRAM; Mikko Ritala and Simone Raoux (Helsinki and T. J. Watson IBM)Chapter 6 .FeRAM; Susanne Hoffmann and Takayuki Watanabe (Juelich and Canon)IV.ALD for logic devices Chapter 7.Front end of the line process; Jeong Hwan Han, Moonju Cho, Annelies Delabie, Tae Joo Park, and Cheol Seong HwangChapter 8. Back end of the line; Hyung Joon Kim, Han-Bo-Ram Lee, and Soohyun Kim (Yonsei and Youngnam University)V.ALD machinesChapter 9. Equipment for Atomic Layer Deposition for Semiconductor Manufacturing; Schubert Chu
Atomic Layer Deposition (ALD) was originally designed for depositing uniform passivation layers over a very large area for display devices in the late 1970s. Only recently, in the 21st century, has the this technique become popular for high integrated semiconductor memory devices. This book discusses ALD for all modern semiconductor devices, the basic chemistry of ALD, and models of ALD processes. The book also details ALD for both mass produced memories and emerging memories. Each chapter of the book provides history, operating principles, and a full explanation of ALD processes for each device.
This edited volume discusses atomic layer deposition (ALD) for all modern semiconductor devices, moving from the basic chemistry of ALD and modeling of ALD processes to sections on ALD for memories, logic devices, and machines.
This edited volume discusses atomic layer deposition (ALD) for all modern semiconductor devices, moving from the basic chemistry of ALD and modeling of ALD processes to sections on ALD for memories, logic devices, and machines. The section on ALD for memories covers both mass-produced memories, such as DRAM and Flash, and emerging memories, such as PCRAM and FeRAM. The section on ALD for logic devices covers both front-end of the line processes and back-end of the line processes. The final section on ALD for machines looks at toolsets and systems hardware. Each chapter provides the history, operating principles, and a full explanation of ALD processes for each device.
Introduction.- Precursors and reaction mechanisms.- ALD simulations.- ALD for mass-production memories (DRAM and Flash).- ALD for emerging memories.- PcRAM.- FeRAM.- Front end of the line process.- Back end of the line.- ALD machines.
Cheol Seong Hwang received M.S. and Ph.D. degrees from Seoul National University, Seoul, Korea, in 1989 and 1993, respectively. In 1993, he joined the Material Science and Engineering Laboratory at the National Institutes of Standards and Technology, Gaithersburg, MD, as a Postdoctoral Research Fellow. He then joined Samsung Electronics Company, Ltd., as a Senior Researcher in 1994. In 1998, Dr. Hwang became a professor in the department of material science and engineering at Seoul National University. He has authored or coauthored more than 380 papers in international peer-reviewed scientific journals, which have been cited more than 7,500 times.Dr. Hwang was a recipient of the Alexander von Humboldt Fellowship Award, the 7th Presidential Young Scientist Award of the Korean government, and Faculty Excellent Award of Air Products, USA.
Über den Autor
Cheol Seong Hwang received M.S. and Ph.D. degrees from Seoul National University, Seoul, Korea, in 1989 and 1993, respectively. In 1993, he joined the Material Science and Engineering Laboratory at the National Institutes of Standards and Technology, Gaithersburg, MD, as a Postdoctoral Research Fellow. He then joined Samsung Electronics Company, Ltd., as a Senior Researcher in 1994. In 1998, Dr. Hwang became a professor in the department of material science and engineering at Seoul National University. He has authored or coauthored more than 380 papers in international peer-reviewed scientific journals, which have been cited more than 7,500 times.Dr. Hwang was a recipient of the Alexander von Humboldt Fellowship Award, the 7th Presidential Young Scientist Award of the Korean government, and Faculty Excellent Award of Air Products, USA.
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Inhaltsverzeichnis
I.Introduction
Chapter 1. Introduction; Cheol Seong Hwang and Cha Young Yoo (Seoul National University and Samsung)
II.Fundamentals
Chapter 2 . ALD Precursors and Reaction mechanism ; Roy Gordon (Harvard)
Chapter 3 . ALD simulations; Simon Elliott (Tyndall)
III.ALD for memory devices
Chapter 4 . ALD for mass-production memories (DRAM and Flash); Cheol Seong Hwang,
Seong Keun Kim, and Sang Woon Lee (SNU)
III-2. ALD for emerging memories
Chapter 5 . PcRAM; Mikko Ritala and Simone Raoux (Helsinki and T. J. Watson IBM)
Chapter 6 .FeRAM; Susanne Hoffmann and Takayuki Watanabe (Juelich and Canon)
IV.ALD for logic devices
Chapter 7.Front end of the line process; Jeong Hwan Han, Moonju Cho, Annelies Delabie, Tae Joo Park, and Cheol Seong Hwang
Chapter 8. Back end of the line; Hyung Joon Kim, Han-Bo-Ram Lee, and Soohyun Kim (Yonsei and
Youngnam University)
V.ALD machines
Chapter 9. Equipment for Atomic Layer Deposition for Semiconductor Manufacturing; Schubert Chu
Klappentext
This edited volume discusses atomic layer deposition (ALD) for all modern semiconductor devices, moving from the basic chemistry of ALD and modeling of ALD processes to sections on ALD for memories, logic devices, and machines. The section on ALD for memories covers both mass-produced memories, such as DRAM and Flash, and emerging memories, such as PCRAM and FeRAM. The section on ALD for logic devices covers both front-end of the line processes and back-end of the line processes. The final section on ALD for machines looks at toolsets and systems hardware. Each chapter provides the history, operating principles, and a full explanation of ALD processes for each device.
First book to connect missing link between semiconductor device engineers/designers and process engineers, material designers, and chemists
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First book solely dedicated to the application of ALD to the semiconductor/microelectronics fields
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Written by top experts in the field
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