Part I A Review of Analytical Mechanics and Electromagnetism.- Analytical Mechanics.- Coordinate Transformations and Invariance Properties.- Applications of the Concepts of Analytical Mechanics.- Electromagnetism.- Applications of the Concepts of Electromagnetism.- Part II Introductory Concepts to Statistical and Quantum Mechanics.- Classical Distribution Function and Transport Equation.- From Classical Mechanics to Quantum Mechanics.- Time-Independent Schrodinger Equation.- Time-Dependent Schrodinger Equation.- General Methods of Quantum Mechanics.- Part III Applications of the Schrodinger Equation.- Elementary Cases.- Cases Related to the Linear Harmonic Oscillator.- Other Examples of the Schrodinger Equation.- Time-Dependent Perturbation Theory.- Part IV Systems of Interacting Particles- Quantum Statistics.- Many-Particle Systems.- Separation of Many-Particle Systems.- Part V Applications to Semiconducting Crystals.- Periodic Structures.- Electrons and Holes in Semiconductors at Equilibrium.- Part VI Transport Phenomena in Semiconductors.- Mathematical Model of Semiconductor Devices.- Generation-Recombination and Mobility.- Part VII Basic Semiconductor Devices.- Bipolar Devices.- MOS Devices.- Part VIII Miscellany.- Thermal Diffusion.- Thermal Oxidation- Layer Deposition.- Measuring the Semiconductor Parameters.
This book describes the basic physics of semiconductors, including the hierarchy of transport models, and connects the theory with the functioning of actual semiconductor devices. Details are worked out carefully and derived from the basic physics, while keeping the internal coherence of the concepts and explaining various levels of approximation. Examples are based on silicon due to its industrial importance. Several chapters are included that provide the reader with the quantum-mechanical concepts necessary for understanding the transport properties of crystals. The behavior of crystals incorporating a position-dependent impurity distribution is described, and the different hierarchical transport models for semiconductor devices are derived (from the Boltzmann transport equation to the hydrodynamic and drift-diffusion models). The transport models are then applied to a detailed description of the main semiconductor-device architectures (bipolar, MOS). The final chapters are devoted to the description of some basic fabrication steps, and to measuring methods for the semiconductor-device parameters.