Process Modeling.- IC technology CAD overview.- The Boltzmann-Poisson system in weakly collisional sheaths.- An interface method for semiconductor process simulation.- Asymptotic analysis of a model for the diffusion of dopant-defect pairs.- A reaction-diffusion system modeling phosphorus diffusion.- Atomic diffusion in GaAs with controlled deviation from stoichiometry.- Circuit Simulation.- Theory of a stochastic algorithm for capacitance extraction in integrated circuits.- Moment-matching approximations for linear(ized) circuit analysis.- Spectral algorithm for simulation of integrated circuits.- Convergence of waveform relaxation for RC circuits.- Switched networks.
Semiconductor and integrated-circuit modeling are an important part of the high-technology "chip" industry, whose high-performance, low-cost microprocessors and high-density memory designs form the basis for supercomputers, engineering workstations, laptop computers, and other modern information appliances. There are a variety of differential equation problems that must be solved to facilitate such modeling. This two-volume set covers three topic areas: process modeling and circuit simulation in Volume I and device modeling in Volume II. Process modeling provides the geometry and impurity doping characteristics that are prerequisites for device modeling; device modeling, in turn, provides static current and transient charge characteristics needed to specify the so-called compact models employed by circuit simulators. The goal of these books is to bring together scientists and mathematicians to discuss open problems, algorithms to solve such, and to form bridges between the diverse disciplines involved.
Springer Book Archives