Proceedings of a NATO ARW held in Cargese, France, September 9-14, 1991
This book contains the lectures delivered at the NATO Advanced Research Workshop on the "Intersubband Transistions in Quantum Wells" held in Cargese, France, between the t 9 h and the 14th of September 1991. The urge for this Workshop was justified by the impressive growth of work dealing with this subject during the last two or three years. Indeed, thanks to recent progresses of epitaxial growth techniques, such as Molecular Beam Epitaxy, it is now possible to realize semiconductor layers ( e.g. GaAs) with thicknesses controlled within one atomic layer, sandwiched between insulating layers (e.g. AlGaAs). When the semiconducting layer is very thin, i.e. less than 15 nm, the energy of the carriers corresponding to their motion perpendicular to these layers is quantized, forming subbands of allowed energies. Because of the low effective masses in these semiconducting materials, the oscillator strengths corresponding to intersubband transitions are extremely large and quantum optical effects become giant in the 5 - 20 ~ range: photoionization, optical nonlinearities, ... Moreover, a great theoretical surprise is that - thanks to the robustness of the effective mass theory - these quantum wells are a real life materialization of our old text book one-dimensional quantum well ideal. Complex physical phenomena may then be investigated on a simple model system.
Detection: Coupling of Radiation into Quantum Well Infrared Detectors by the Use of Reflection Gratings and Waveguide Structures; J.Y. Andersson, L. Lundquist. Fundamental Limits in Quantum Well Intersubband Detection; I. Gravé, A. Yariv. Low-Dimesion Effects: Spectroscopy of Quantum Dot Atoms; D. Heitmann, et al. Photon Scattering and Relaxation Properties of Lower Dimensional Electron Gasses; U. Bockelmann. Nonlinear Optics: Electron Transfer Infrared Modulator; V. Berger et, al. Second Harmonic Generation in Asymmetric AlGaAs Quantum Wells; F.H. Julien. Other Quantum Systems: Intersubband Absorption in the Conduction Band of Si/SiGe Multiple Quantum Wells; H. Hertle, et al. Physics of Intersubband Transitions: Inelastic Light Scattering Study of Intersubband Transitions; G. Abstreiter. 23 addtional articles. Index.
Coupling of Radiation into Quantum Well Infrared Detectors by the Use of Reflection Gratings and Waveguide Structures.- Fundamental Limits in Quantum Well Intersubband Detection.- Performance Trade Offs in the Quantum Well Infra-Red Detector.- Recent Progress in Quantum Well Infrared Photodetectors.- Effects of the Upper State Position and the Number of Wells on the Performance of Intersubband Quantum Well Detectors.- Intersubband Transition and Electron Transport in Potential-Inserted Quantum Well Structures and their Potentials for Infrared Photodetector.- Photovoltaic Intersubband Photodetectors Using GaAs Quantum Wells Confined by AlAs Tunnel Barriers.- Photon Drag IR-Detectors - the Doppler Effect in the Intersubband Resonance of 2-D Electron Systems.- Application of Multiple Quantum-Well Infrared Detectors to Present and Future Infrared Sensor Systems.- Phonon Scattering and Relaxation Properties of Lower Dimensional Electron Gases.- Spectroscopy of Quantum-Dot Atoms.- Electron Transfer Infrared Modulator (ETIM).- Nonlinear Optics of Intersubband Transitions in AlInAs/GaInAs Coupled Quantum Wells: Second Harmonic Generation and Resonant Stark Tuning of ?2?(2).- Far-Infrared Emission and Absorption Spectroscopy of Quantum Wells and Superlattices.- Room-Temperature Photo-Induced Intersubband Absorption in GaAs/AlGaAs Quantum Wells.- Second Harmonic Generation in Asymmetric AlGaAs Quantum Wells.- Model System for Optical Nonlinearities: Asymmetric Quantum Wells.- Third Order Intersubband Kerr Effect in GaAs/AlGaAs Quantum Wells.- Optical Bistability Related to Intersubband Absorption in Asymmetric Quantum Wells.- Feasibility of Optically-Pumped Four-Level Infrared Lasers.- Quantum Well Engineering for Intersubband Transitions - General Conduction Band Extrema and Valence Valley.- Internal Photoemission of Asymmetrical Pt/Si/ErSi1.7 Heterostructures with Tunable Cutoff Wavelength.- Intersubband Absorption in the Conduction Band of Si/Si1-xGex Multiple Quantum Wells.- Inelastic Light Scattering of Electronic Excitations in Quantum Wells.- Photo-Induced Intersubband Transitions in Quantum Wells.- Subpicosecond Luminescence Study of Capture and Intersubband Relaxation in Quantum Wells.- Intersubband Infrared Absorption in a GaAs/Al0.3Ga0.7As Multiple Quantum Well.- Electric Field Effects on Bound to Quasibound Intersubband Absorption and Photocurrent in GaAs/AlGaAs Quantum Wells.- Intersubband Relaxation in Modulation Doped Quantum Well Structures.- Theory of Optical Intersubband Transitions.- Bound to Free State Infrared Absorption and Selection Rules in Quantum Wells.- Contributors.
Inhaltsverzeichnis
Coupling of Radiation into Quantum Well Infrared Detectors by the Use of Reflection Gratings and Waveguide Structures.- Fundamental Limits in Quantum Well Intersubband Detection.- Performance Trade Offs in the Quantum Well Infra-Red Detector.- Recent Progress in Quantum Well Infrared Photodetectors.- Effects of the Upper State Position and the Number of Wells on the Performance of Intersubband Quantum Well Detectors.- Intersubband Transition and Electron Transport in Potential-Inserted Quantum Well Structures and their Potentials for Infrared Photodetector.- Photovoltaic Intersubband Photodetectors Using GaAs Quantum Wells Confined by AlAs Tunnel Barriers.- Photon Drag IR-Detectors - the Doppler Effect in the Intersubband Resonance of 2-D Electron Systems.- Application of Multiple Quantum-Well Infrared Detectors to Present and Future Infrared Sensor Systems.- Phonon Scattering and Relaxation Properties of Lower Dimensional Electron Gases.- Spectroscopy of Quantum-Dot Atoms.- Electron Transfer Infrared Modulator (ETIM).- Nonlinear Optics of Intersubband Transitions in AlInAs/GaInAs Coupled Quantum Wells: Second Harmonic Generation and Resonant Stark Tuning of ?2?(2).- Far-Infrared Emission and Absorption Spectroscopy of Quantum Wells and Superlattices.- Room-Temperature Photo-Induced Intersubband Absorption in GaAs/AlGaAs Quantum Wells.- Second Harmonic Generation in Asymmetric AlGaAs Quantum Wells.- Model System for Optical Nonlinearities: Asymmetric Quantum Wells.- Third Order Intersubband Kerr Effect in GaAs/AlGaAs Quantum Wells.- Optical Bistability Related to Intersubband Absorption in Asymmetric Quantum Wells.- Feasibility of Optically-Pumped Four-Level Infrared Lasers.- Quantum Well Engineering for Intersubband Transitions - General Conduction Band Extrema and Valence Valley.- Internal Photoemission of Asymmetrical Pt/Si/ErSi1.7 Heterostructures with Tunable Cutoff Wavelength.- Intersubband Absorption in the Conduction Band of Si/Si1-xGex Multiple Quantum Wells.- Inelastic Light Scattering of Electronic Excitations in Quantum Wells.- Photo-Induced Intersubband Transitions in Quantum Wells.- Subpicosecond Luminescence Study of Capture and Intersubband Relaxation in Quantum Wells.- Intersubband Infrared Absorption in a GaAs/Al0.3Ga0.7As Multiple Quantum Well.- Electric Field Effects on Bound to Quasibound Intersubband Absorption and Photocurrent in GaAs/AlGaAs Quantum Wells.- Intersubband Relaxation in Modulation Doped Quantum Well Structures.- Theory of Optical Intersubband Transitions.- Bound to Free State Infrared Absorption and Selection Rules in Quantum Wells.- Contributors.
Klappentext
This book contains the lectures delivered at the NATO Advanced Research Workshop on the "Intersubband Transistions in Quantum Wells" held in Cargese, France, between the t 9 h and the 14th of September 1991. The urge for this Workshop was justified by the impressive growth of work dealing with this subject during the last two or three years. Indeed, thanks to recent progresses of epitaxial growth techniques, such as Molecular Beam Epitaxy, it is now possible to realize semiconductor layers ( e.g. GaAs) with thicknesses controlled within one atomic layer, sandwiched between insulating layers (e.g. AlGaAs). When the semiconducting layer is very thin, i.e. less than 15 nm, the energy of the carriers corresponding to their motion perpendicular to these layers is quantized, forming subbands of allowed energies. Because of the low effective masses in these semiconducting materials, the oscillator strengths corresponding to intersubband transitions are extremely large and quantum optical effects become giant in the 5 - 20 ~ range: photoionization, optical nonlinearities, ... Moreover, a great theoretical surprise is that - thanks to the robustness of the effective mass theory - these quantum wells are a real life materialization of our old text book one-dimensional quantum well ideal. Complex physical phenomena may then be investigated on a simple model system.
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