Part One: Growth techniques. Bulk growth techniques. Liquid phase epitaxy. Metal-organic vap our phase epitaxy. Molecular beam epitaxy of HgCdTe. Part Two: Materials characterisation. Optical properties of MCT. Transport properties of narrow-gap II-VI compounds. Intrinsic and extrinsic doping. Point defects in narrow-gap II-VI compounds. Diffusion in narrow-gap II-VI compounds. Surfaces/interfaces of narrow-gap II-VI compounds. Trends in structural defects in narrow-gap II-VI semiconductors. Quantum wells and superlattices. Properties of diluted magnetic semiconductors. Part Three: Device applications. Photoconductive detectors in HgCdTe and related alloys. Photovoltaic IR detectors. Non-equilibrium devices in HgCdTe. Emission devices. Photoelectromagnetic, magnetoconcentration and Dember infrared detecors. Solar cells based on CdTe. Radiation detectors. Index.
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