Über den Autor
Dr. Grabinski, Dr. Nauwelaers and Dr. Scheurs organized the MOS-Modeling workshop at the European Solid-State Devices Conference (ESSDERC) in 2004, and due to popular request will do again at ESSDERC 2005 in Grenoble. Dr. Grabinski is in industry, at Freescale Semiconductor, while Dr. Nauwelaers and Dr. Schreurs are in academia.
Introduction; W.Grabinski/ B.Nauwelaers/ D.Schreurs
1. 2/3D process and devices simulation; D.Donoval/ A.Vrbicky/ A.Chvala/P.Beno
2. PSP: An advanced surface-potential-based mosfet model; R.van Langevelde/ G.Gildenblat
3. EKV 3.0 mosfet model; M.Bucher/ A.Bazigos/ F.Drummenacher/ J-M.Sallese/ C.Enz
4. Modeling using high-frequency measurements; D.Schreurs
5. Empirical FET Models; I.Angelov
6. Modeling the SOI MOSFET Nonlinearities; B.Parvais/ A.Siligaris
7. Circuit level RF modeling and design; N.Itoh
8. On incorporating parasitic quantum effects in classical circuits simulations; F.Felgenhauer/ M.Begoin/ W.Mathis
9. Compact modeling of the MOSFET in VHDL-AMS; C.Lallement/ F.Pecheux/ A.Vachoux/ F.Pregaldiny
10. Compact modeling in Verilog-A; B.Troyanovsky/ P.O'Halloran/ M.Mierzwinski
The editors and authors present a wealth of knowledge regarding the most relevant aspects in the field of MOS transistor modeling.
The variety of subjects and the high quality of content of this volume make it a reference document for researchers and users of MOSFET devices and models. The book can be recommended to everyone who is involved in compact model developments, numerical TCAD modeling, parameter extraction, space-level simulation or model standardization. The book will appeal equally to PhD students who want to understand the ins and outs of MOSFETs as well as to modeling designers working in the analog and high-frequency areas.
This comprehensive volume presents a wealth of practical knowledge in the field of MOS transistor modeling. Coverage includes the 2/3D process and device simulations with a focus on high-voltage MOSFET devices, the development of both PSP and EKV models, and comparisons of physics-based MOSFET models with measurement-based models. The variety of subjects and the high quality content of this volume make it a preferred reference for researchers and users of MOSFET devices and models. The book is recommended for everyone involved in compact model developments, numerical TCAD modeling, parameter extraction, space-level simulation or model standardization.