Preface. I: Noise Sources. l/fNoise Sources; F.N. Hooge. Noise Sources in GaN/AlGaN Quantum Wells and Devices; S. Rumyantsev. l/fNoise in Nanomaterials and Nanostructures: Old Questions in a New Fashion; M.N. Mihaila. l/fSpectra as a Consequence of the Randomness of Variance; G. Härtler. Quantum Phase Locking, l/fNoise and Entanglement; M. Planat, H. Rosu. Shot Noise in Mesoscopic Devices and Quantum Dot Networks; P. Maccuci, et al. Super-Poissonian Noise in Nanostructures; Y. Blanter. Stochastic and Deterministic Models of Noise; J. Kumicak. II: Noise in Nanoscale Devices. Noise in Optoelectric Devices; R. Alabedra. Fluctuations of Optical and Electrical Parameters and Their Correlation of Multiple-Quantum-Well INGAAS/INP Lasers; S. Pralgauskaité, et al. Microwave Noise and Fast/Ultrafast Electronic Processes in Nitride 2DEG Channels; A. Matulionis. Noise of High Temperature Superconducting Bolometers; I.A. Khrebtov. l/fNoise in MOSTs: Faster is Noisier; L.K.J. Vandamme. Experimental Assessment of Quantum Effects in the Low-Frequency Noise and RTS of Deep Submicron MOSFETs; I. Simoen, et al. Noise and Tunneling through the 2.5 nm Gate Oxide in SOI MOSFETs; N. Lukyanchikova, et al. Low Frequency Noise Studies of Si Nano-Crystal Effects in MOS Transistors and Capacitors; S. Ferraton, et al. Noise Modelling in Low Dimensional Electronic Structures; L. Reggiani, et al. Correlation Noise Measurements and Modelling of Nanoscale MOSFETs; J. Lee, G. Bosman. Tunneling Effects and Low Frequency Noise of GaN/GaAlN HFETs; M. Levinshtein, et al. High Frequency Noise Sources Extraction in Nanometique MOSFETs; F. Danneville, etal. Informative 'Passport Data' of Surface Nano- and Microstructures; S.F. Timashev, et al. III: Noise Measurement Technique. Noise Measurement Techniques; L.K.J. Vandamme. Techniques for High-Sensitivity Measurements of Shot Noise in Nanostructures; B. Pellegrini, et al. Correlation Spectrum Analyser: Principles and Limits in Noise Measurements; G. Ferrari, M. Sampietro. Measurement and Analysis Methods for Random Telegraph Signals; Z. Çelik-Butler. RTS in Quantum Dots and MOSFETs: Set-Up with Long-Time Stability and Magnetic Fields Compensation; J. Sikula, et al. Some Considerations for the Construction of Low-Noise Amplifiers in Very Low Frequency Region; J. Sikula, et al. Measurements of Low Frequency Noise in Nano-Grained RuO2+Glass Films below 1 K; A. Kolek. Technique for Investigation of Non-Gaussian and Non-Stationary Properties of LF Noise in Nanoscale Semiconductor Devices; A. Yakimov, et al. The Noise Background Suppression of Noise Measuring Set-Ups; P. Hruska, K. Hajek. Accuracy of Noise Measurements for l/f and GR Noise; I. Slaidiņs. Radiofrequency and Microwave Noise Metrology; E. Rubioloa, V. Giordano. Treatment of Noise Data in Laplace Plane; B.M. Grafov. Measurement of Noise Parameter Set in the Low Frequency Range: Requirements and Instrumentation; L. Hasse. Techniques of Interference Reduction in Probe System for Wafer Noise Measurements of Submicron Semiconductor Devices; L. Spiralski, et al. Hooge Mobility Fluctuations in n-Insb Magnetoresistors as a Reference for Access Resistance LF-Noise Measurements of SiGe Metamorphic HMOS FETs; S. Durov, et al. Optimised Preamplifier for LF-Noise MOSFET Characterization; S. Durov, O.A. Mironov. Net of
A discussion of recently developed experimental methods for noise research in nanoscale electronic devices, conducted by specialists in transport and stochastic phenomena in nanoscale physics. The approach described is to create methods for experimental observations of noise sources, their localization and their frequency spectrum, voltage-current and thermal dependences. Our current knowledge of measurement methods for mesoscopic devices is summarized to identify directions for future research, related to downscaling effects.
The directions for future research into fluctuation phenomena in quantum dot and quantum wire devices are specified. Nanoscale electronic devices will be the basic components for electronics of the 21st century. From this point of view the signal-to-noise ratio is a very important parameter for the device application. Since the noise is also a quality and reliability indicator, experimental methods will have a wide application in the future.
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