Autor/Autorin: Kumar Sushil
Sushil Kumar received M. Tech. (VLSI Design) degree and has worked towards his Ph.D. degree in ECE. His research interests are CMOS integrated-circuit design, low-power and low-voltage VLSI circuits and systems, high-speed RF/analog/mixed-signal ICs . He has authored or co-authored many international conference and journal papers.
The piezoelectric & inverse piezoelectric effects are the actuation & detection mechanism involved in these devices. According to these principles, voltage applied to the resonator electrode induce strain of the acoustic layer & vice versa; after mechanical strain of the acoustic layer a voltage can be read out the electrodes. FBAR devices using piezoelectric films with thicknesses ranging from several micrometers down to tenth of micrometers resonate in the frequency range of roughly 100 MHz to 10 GHz. Device modeling and fabrication technology of FBAR has been included as a part of study in this project report. We worked on the ANSYS model of piezoelectric resonator and analyzed the modal, transient & harmonic analysis of the concerned circuit after FEM analysis of the device. Modal analysis provided the resonant frequencies at different modes; transient analysis resulted in the measurement of the current at different instants of time and the harmonic analysis of piezoelectric transducer derived the voltage magnitudes and phases at different instants followed by the graphical representation of voltage with respect to different frequencies.
Kumar, Sushil
Sushil Kumar received M. Tech. (VLSI Design) degree and has worked towards his Ph.D. degree in ECE. His research interests are CMOS integrated-circuit design, low-power and low-voltage VLSI circuits and systems, high-speed RF/analog/mixed-signal ICs . He has authored or co-authored many international conference and journal papers.
Über den Autor
Sushil Kumar was born in Uttar Pradesh, India in 1984. He received his Ph.D. in bioinorganic chemistry with Professor Kaushik Ghosh at Indian Institute of Technology Roorkee, India in 2013. He is currently a postdoctoral fellow at UFC, France. Studies on photolabile metal nitrosyl complexes and hemilabile sulfur ligands are focus of his research
Klappentext
The piezoelectric & inverse piezoelectric effects are the actuation & detection mechanism involved in these devices. According to these principles, voltage applied to the resonator electrode induce strain of the acoustic layer & vice versa; after mechanical strain of the acoustic layer a voltage can be read out the electrodes. FBAR devices using piezoelectric films with thicknesses ranging from several micrometers down to tenth of micrometers resonate in the frequency range of roughly 100 MHz to 10 GHz. Device modeling and fabrication technology of FBAR has been included as a part of study in this project report. We worked on the ANSYS model of piezoelectric resonator and analyzed the modal, transient & harmonic analysis of the concerned circuit after FEM analysis of the device. Modal analysis provided the resonant frequencies at different modes; transient analysis resulted in the measurement of the current at different instants of time and the harmonic analysis of piezoelectric transducer derived the voltage magnitudes and phases at different instants followed by the graphical representation of voltage with respect to different frequencies.
