Provides a comprehensive overview of the technology for charge-trapping non-volatile memories
Details new architectures and current modeling concepts for non-volatile memory devices
Focuses on conduction through multi-layer gate dielectrics stacks
Dr Panagiotis Dimitrakis graduated the Physics Department of the University of Athens (BSc 1995, MSc 1998) and received his PhD degree in the field of nanocrystal memories in 2006 from the School of Applied Mathematical and Physical Sciences of the National Technical University of Athens (NTUA). He has been employed by University of Athens, NTUA and National Research Center for Scientific Research "Demokritos” (NCSRD) in several Greek and competitive EU research projects as research scientist. In addition, he was principal investigator for NCSRD in a project funded by European Space Agency (ESA) on tunable photo-detector based on QDs. Currently, he is coordinating a project on resistive memories using graphene. He has published 50 papers in international peer-reviewed journals. He has 10 invited talks and more than 40 papers in international conference proceeding volumes on the physics and the electrical characterization of submicron MOSFETs, novel FET nano-devices, nonvolaitle memories, and organic electronic devices. Also he has published two book chapters in the field of nanoelectronic memories. More specifically, he has co-organized the NVM symposia in MRS Meetings from 2010 up to 2014. He is a Member of IEEE (Electron Devices Society) and Material Research Society (MRS) and reviewer in several international journals. He has participated in the technical program committees and has organized several international conferences and Workshops in Europe and USA and edited their proceedings. Presently, he is with Institute of Nanoscience & Nanotechnology (INN)-NCSRD (since 2007) where he is the manager of the Central Cleanroom Facility-Nanotechnology & Microsystems Laboratory. His research interests are focused in the field of nonvolatile memory devices, hybrid organic/inorganic semiconductor nano-devices, Graphene nanoelectronic devices as well as the physics and characterization of nanowire
transistors and novel nanostructured photovoltaic devices.
This book describes the basic technologies and operation principles of charge-trapping non-volatile memories. The authors explain the device physics of each device architecture and provide a concrete deillegalscription of the materials involved as well as the fundamental properties of the technology. Modern material properties used as charge-trapping layers, for new applications are introduced.
Preface
Chapter 1 - Introduction to NVM devices
Panagiotis Dimitrakis
Chapter 2 - A synopsis on the state of the art of NAND memories
Kirk Prall, Nirmal Ramaswamy, Akira Goda
Chapter 3 - Charge-trap memories with ion beam modified ONO stacks
Vassilios Ioannou-Sougleridis, Panagiotis Dimitrakis and P. Normand
Chapter 4 - 3D NAND Flash Architectures
Hang-Ting Lue
Chapter 5 - Quantum dot Nonvolatile Memories
Panagiotis Dimitrakis, Vassilios Ioanou-Sougleridis, P. Normand
Chapter 6 - Two-Terminal Organic Memories with Metal or Semiconductor Nanoparticles
Jianyong Ouyang
This book describes the basic technologies and operation principles of charge-trapping non-volatile memories. The authors explain the device physics of each device architecture and provide a concrete deillegalscription of the materials involved as well as the fundamental properties of the technology. Modern material properties used as charge-trapping layers, for new applications are introduced.
Preface.- Introduction to NVM devices.- A synopsis on the state of the art of NAND memories.- Charge-trap memories with ion beam modified ONO stacks.- 3D NAND Flash Architectures.- Quantum dot Nonvolatile Memories.- Two-Terminal Organic Memories with Metal or Semiconductor Nanoparticles.
Dr Panagiotis Dimitrakis graduated the Physics Department of the University of Athens (BSc 1995, MSc 1998) and received his PhD degree in the field of nanocrystal memories in 2006 from the School of Applied Mathematical and Physical Sciences of the National Technical University of Athens (NTUA). He has been employed by University of Athens, NTUA and National Research Center for Scientific Research "Demokritos" (NCSRD) in several Greek and competitive EU research projects as research scientist. In addition, he was principal investigator for NCSRD in a project funded by European Space Agency (ESA) on tunable photo-detector based on QDs. Currently, he is coordinating a project on resistive memories using graphene. He has published 50 papers in international peer-reviewed journals. He has 10 invited talks and more than 40 papers in international conference proceeding volumes on the physics and the electrical characterization of submicron MOSFETs, novel FET nano-devices, nonvolaitle memories, and organic electronic devices. Also he has published two book chapters in the field of nanoelectronic memories. More specifically, he has co-organized the NVM symposia in MRS Meetings from 2010 up to 2014. He is a Member of IEEE (Electron Devices Society) and Material Research Society (MRS) and reviewer in several international journals. He has participated in the technical program committees and has organized several international conferences and Workshops in Europe and USA and edited their proceedings. Presently, he is with Institute of Nanoscience & Nanotechnology (INN)-NCSRD (since 2007) where he is the manager of the Central Cleanroom Facility-Nanotechnology & Microsystems Laboratory. His research interests are focused in the field of nonvolatile memory devices, hybrid organic/inorganic semiconductor nano-devices, Graphene nanoelectronic devices as well as the physics and characterization of nanowire
transistors and novel nanostructured photovoltaic devices.
Über den Autor
Dr Panagiotis Dimitrakis graduated the Physics Department of the University of Athens (BSc 1995, MSc 1998) and received his PhD degree in the field of nanocrystal memories in 2006 from the School of Applied Mathematical and Physical Sciences of the National Technical University of Athens (NTUA). He has been employed by University of Athens, NTUA and National Research Center for Scientific Research "Demokritos" (NCSRD) in several Greek and competitive EU research projects as research scientist. In addition, he was principal investigator for NCSRD in a project funded by European Space Agency (ESA) on tunable photo-detector based on QDs. Currently, he is coordinating a project on resistive memories using graphene. He has published 50 papers in international peer-reviewed journals. He has 10 invited talks and more than 40 papers in international conference proceeding volumes on the physics and the electrical characterization of submicron MOSFETs, novel FET nano-devices, nonvolaitle memories, and organic electronic devices. Also he has published two book chapters in the field of nanoelectronic memories. More specifically, he has co-organized the NVM symposia in MRS Meetings from 2010 up to 2014. He is a Member of IEEE (Electron Devices Society) and Material Research Society (MRS) and reviewer in several international journals. He has participated in the technical program committees and has organized several international conferences and Workshops in Europe and USA and edited their proceedings. Presently, he is with Institute of Nanoscience & Nanotechnology (INN)-NCSRD (since 2007) where he is the manager of the Central Cleanroom Facility-Nanotechnology & Microsystems Laboratory. His research interests are focused in the field of nonvolatile memory devices, hybrid organic/inorganic semiconductor nano-devices, Graphene nanoelectronic devices as well as the physics and characterization of nanowire
transistors and novel nanostructured photovoltaic devices.
Inhaltsverzeichnis
Preface.- Introduction to NVM devices.- A synopsis on the state of the art of NAND memories.- Charge-trap memories with ion beam modified ONO stacks.- 3D NAND Flash Architectures.- Quantum dot Nonvolatile Memories.- Two-Terminal Organic Memories with Metal or Semiconductor Nanoparticles.
Klappentext
This book describes the basic technologies and operation principles of charge-trapping non-volatile memories. The authors explain the device physics of each device architecture and provide a concrete deillegalscription of the materials involved as well as the fundamental properties of the technology. Modern material properties used as charge-trapping layers, for new applications are introduced.
Provides a comprehensive overview of the technology for charge-trapping non-volatile memories
Details new architectures and current modeling concepts for non-volatile memory devices
Focuses on conduction through multi-layer gate dielectrics stacks
