Offers comprehensive treatment of the use of ion beams in material science research
Includes numerous tables, graphs and illustrations that amplify the text
Provides optimization strategies for solid-state properties of functional materials
Bernd Schmidt received his PhD in Physics at the State University of St. Petersburg (Russia) in 1976. Since 1994 he has been head of the Process Technology Division at the Helmholtz-Zentrum Dresden-Rossendorf, Germany. His research interests include semiconductor technology as well as ion implantation and the synthesis of nanostructures. He is author of the specialist book "Silicon Sensors" (1986) and of more than 150 refereed journal papers.
Klaus Wetzig received his PhD (1967) and postdoctoral (1973) degrees in Physics at the TU Dresden, Germany. From 1992 until his retirement in 2006 he was full professor of Materials Analysis at the TU Dresden and research director at the Leibniz Institute for Solid State and Materials Research Dresden (IFW). His research interests include materials analysis, nanostructures and particle-solid interactions. He is author of several specialist books and of more than 300 refereed journal papers.
A comprehensive review of ion beam application in modern materials research is provided, including the basics of ion beam physics and technology. The physics of ion-solid interactions for ion implantation, ion beam synthesis, sputtering and nano-patterning is treated in detail. Its applications in materials research, development and analysis, developments of special techniques and interaction mechanisms of ion beams with solid state matter result in the optimization of new material properties, which are discussed thoroughly. Solid-state properties optimization for functional materials such as doped semiconductors and metal layers for nano-electronics, metal alloys, and nano-patterned surfaces is demonstrated. The ion beam is an important tool for both materials processing and analysis. Researchers engaged in solid-state physics and materials research, engineers and technologists in the field of modern functional materials will welcome this text.
Preface
1. Introduction
2. Fundamentals
3. Ion Beam Technology
3.1 Principles of Ion Accelerators
3.1.1 Low Energy Ion Accelerators (Ion Implanters)
3.1.2 High Energy Ion Accelerators
3.2 Ion Sources
3.2.1 Hot Filament (Hot Cathode) Ion Sources
3.2.2 Cold Cathode Ion Source (Penning Ion Source)
3.2.3 High Frequency (RF) Ion Source
3.2.4 Duoplasmatron Ion Source
3.2.5 Ion Sources for Electrostatic Accelerators
3.2.6 Cesium Sputtering Ion Sources
3.2.7 Field-Evaporation or Liquid Metal Ion Sources (LMIS)
3.2.8 Beam Extraction from Ion Sources
3.3 Ion Acceleration
3.4 Ion Beam Handling
3.4.1 Ion Mass Separation
3.4.2 Ion Beam Focusing
3.4.3 Ion Beam Scanning
3.4.4 Ion Beam Current Measurement
3.4.5 Ion Detection (Detectors, Spectrometers)
3.5 Ion Implantation Systems
3.5.1 Common Low Energy Beam Line Implanters
3.5.2 Specialized Low Energy Beam Line Implanters
3.5.3 High Energy Beam Line Implanters
3.5.4 Plasma Based Ion Implanters (PBII)
3.6 Electrostatic Ion Accelerator Systems
3.6.1 Single-Stage Electrostatic Accelerators
3.6.2 Two-Stage Electrostatic Accelerators
3.7 Focused Ion Beam Systems
3.7.1 Low Energy Focused Ion Beams
3.7.2 High Energy Focused Ion Beams
4. Materials Processing
4.1 Ion Irradiation and Damage Annealing
4.2 Ion Implantation into Semiconductors
4.2.1 Ion Implantation into Silicon
4.2.1.1 Advanced CMOS Technology
4.2.1.2 Defect Engineering and Epi-Layer Replacing in High Power Devices
4.2.1.3 Silicon Detector and Sensor Technology
4.2.2 Ion Implantation into Germanium
4.2.3 Ion Implantation into Compound Semiconductors
4.2.3.1 III-V Semiconductors
4.2.3.2 Group III-Nitride Materials
4.2.3.3 Silicon Carbide
4.3 Ion Beam Synthesis of New Phases in Solids
4.3.1 Buried Insulating Layers in Silcon
4.3.2 Ion Beam Synthesized Silicide Layers
4.3.3 Ion Beam Synthesis of Nanocrystals in Insulators
4.4 Ion Beam Mixing of Interfaces
4.5 Ion Beam Slicing of Thin Layers (Smart-Cut for SOI and Solar Cells)
4.6 Ion Beam Erosion, Sputtering and Surface Patterning (Ripples)
4.7 Ion Beam Shaping of Nanomaterials
4.8 Ion Beam Processing of other Materials (Metals, Insulators, Polymers...)
4.8.1 Ion Implantation of Metals
4.8.2 Ion Implantation into Polymers
4.8.3 Ion Implantation into Insulating Optical Materials
5. Ion Beam Preparation of Materials
5.1 Displacement of Target Atoms by Sputtering
5.2 Effects on Sputtering Yield
5.2.1 Ion Energy and Ion Atomic Number
5.2.2 Ion Incident Direction
5.2.3 Selective Sputtering
5.2.4 Targert Material
5.2.5 Preferential Sputtering
5.3 Ion Beam Induced Target Modifications
5.3.1 Ion Beam Cleaning and Etching
5.3.2 Ion Beam Induced Material Deposition
5.3.3 Ion Beam Depth Profiling
5.3.4 Ion Beam Cutting
5.3.5 Ion Beam Thinning
5.4 Focus Ion Beam (FIB) Preparation
5.4.1 FIB Induced Cross Section Preparation
5.4.2 FIB Induced Thin Film Preparation
5.4.3 Limiting Effects at FIB Preparation
6. Ion Beam Analysis of Materials
6.1 Ion- Solid State Interactions
6.2 Ion Beam Analytical Techniques – a Survey
6.3 Ion Beam Scattering Techniques
6.3.1 Rutherford Backscattering (RBS)
6.3.2 Medium Energy Ion Scattering (MEIS)
6.3.3 Elastic Recoil Detection Analysis (ERDA)
6.4 Ion Beam Induced Photon Emission
6.4.1 Particle Induced X-Ray Emission (PIXE)
6.4.2 Particle Induced ?-Ray Emission (PIGE)
6.5 Nuclear Reaction Analysis (NRA)
6.6 Ion Beam Induced Light and Electron Emission
6.7 Secondary Ion Emission
6.7.1 Dynamic Secondary Ion Mass Spectrometry (Dynamic SIMS)
6.7.2 Static Secondary Ion Mass Spectrometry (Static SIMS)
6.7.3 Sputtered Neutral Particle Mass Spectrometry (SNMS)
6.8 Ion Beam Imaging Techniques
6.8.1 Field Ion Microscopy
6.8.2 Ion Microscopy with Stationary Beam
6.8.3 Scanning Ion Microscopy
7. Special Ion Beam Applications in Materials Analysis Problems
7.1 Functional Thin Films and Layers
7.1.1 Direct Study of Diffusion Pricesses in Amorphous Thin Layer Systems
7.1.2 Nanoanalytical Investigations of Tunnelmagnetoresistance Layers
7.2 Ion Beam Analysis in Art and Archeometry
7.3 Special Applications in Life Sciences
Index
7. Special Ion Beam Applications in Materials Analysis Problems
7.1 Functional Thin Films and Layers
7.1.1 Direct Study of Diffusion Pricesses in Amorphous Thin Layer Systems
7.1.2 Nanoanalytical Investigations of Tunnelmagnetoresistance Layers
7.2 Ion Beam Analysis in Art and Archeometry
7.3 Special Applications in Life Sciences
Index
This book covers ion beam application in modern materials research, offering the basics of ion beam physics and technology and a detailed account of the physics of ion-solid interactions for ion implantation, ion beam synthesis, sputtering and nano-patterning.
Preface
1. Introduction
2. Fundamentals
3. Ion Beam Technology
3.1 Principles of Ion Accelerators
3.1.1 Low Energy Ion Accelerators (Ion Implanters)
3.1.2 High Energy Ion Accelerators
3.2 Ion Sources
3.2.1 Hot Filament (Hot Cathode) Ion Sources
3.2.2 Cold Cathode Ion Source (Penning Ion Source)
3.2.3 High Frequency (RF) Ion Source
3.2.4 Duoplasmatron Ion Source
3.2.5 Ion Sources for Electrostatic Accelerators
3.2.6 Cesium Sputtering Ion Sources
3.2.7 Field-Evaporation or Liquid Metal Ion Sources (LMIS)
3.2.8 Beam Extraction from Ion Sources
3.3 Ion Acceleration
3.4 Ion Beam Handling
3.4.1 Ion Mass Separation
3.4.2 Ion Beam Focusing
3.4.3 Ion Beam Scanning
3.4.4 Ion Beam Current Measurement
3.4.5 Ion Detection (Detectors, Spectrometers)
3.5 Ion Implantation Systems
3.5.1 Common Low Energy Beam Line Implanters
3.5.2 Specialized Low Energy Beam Line Implanters
3.5.3 High Energy Beam Line Implanters
3.5.4 Plasma Based Ion Implanters (PBII)
3.6 Electrostatic Ion Accelerator Systems
3.6.1 Single-Stage Electrostatic Accelerators
3.6.2 Two-Stage Electrostatic Accelerators
3.7 Focused Ion Beam Systems
3.7.1 Low Energy Focused Ion Beams
3.7.2 High Energy Focused Ion Beams
4. Materials Processing
4.1 Ion Irradiation and Damage Annealing
4.2 Ion Implantation into Semiconductors
4.2.1 Ion Implantation into Silicon
4.2.1.1 Advanced CMOS Technology
4.2.1.2 Defect Engineering and Epi-Layer Replacing in High Power Devices
4.2.1.3 Silicon Detector and Sensor Technology
4.2.2 Ion Implantation into Germanium
4.2.3 Ion Implantation into Compound Semiconductors
4.2.3.1 III-V Semiconductors
4.2.3.2 Group III-Nitride Materials
4.2.3.3 Silicon Carbide
4.3 Ion Beam Synthesis of New Phases in Solids
4.3.1 Buried Insulating Layers in Silcon
4.3.2 Ion Beam Synthesized Silicide Layers
4.3.3 Ion Beam Synthesis of Nanocrystals in Insulators
4.4 Ion Beam Mixing of Interfaces
4.5 Ion Beam Slicing of Thin Layers (Smart-Cut for SOI and Solar Cells)
4.6 Ion Beam Erosion, Sputtering and Surface Patterning (Ripples)
4.7 Ion Beam Shaping of Nanomaterials
4.8 Ion Beam Processing of other Materials (Metals, Insulators, Polymers...)
4.8.1 Ion Implantation of Metals
4.8.2 Ion Implantation into Polymers
4.8.3 Ion Implantation into Insulating Optical Materials
5. Ion Beam Preparation of Materials
5.1 Displacement of Target Atoms by Sputtering
5.2 Effects on Sputtering Yield
5.2.1 Ion Energy and Ion Atomic Number
5.2.2 Ion Incident Direction
5.2.3 Selective Sputtering
5.2.4 Targert Material
5.2.5 Preferential Sputtering
5.3 Ion Beam Induced Target Modifications
5.3.1 Ion Beam Cleaning and Etching
5.3.2 Ion Beam Induced Material Deposition
5.3.3 Ion Beam Depth Profiling
5.3.4 Ion Beam Cutting
5.3.5 Ion Beam Thinning
5.4 Focus Ion Beam (FIB) Preparation
5.4.1 FIB Induced Cross Section Preparation
5.4.2 FIB Induced Thin Film Preparation
5.4.3 Limiting Effects at FIB Preparation
6. Ion Beam Analysis of Materials
6.1 Ion- Solid State Interactions
6.2 Ion Beam Analytical Techniques - a Survey
6.3 Ion Beam Scattering Techniques
6.3.1 Rutherford Backscattering (RBS)
6.3.2 Medium Energy Ion Scattering (MEIS)
6.3.3 Elastic Recoil Detection Analysis (ERDA)
6.4 Ion Beam Induced Photon Emission
6.4.1 Particle Induced X-Ray Emission (PIXE)
6.4.2 Particle Induced Gamma-Ray Emission (PIGE)
6.5 Nuclear Reaction Analysis (NRA)
6.6 Ion Beam Induced Light and Electron Emission
6.7 Secondary Ion Emission
6.7.1 Dynamic Secondary Ion Mass Spectrometry (Dynamic SIMS)
6.7.2 Static Secondary Ion Mass Spectrometry (Static SIMS)
6.7.3 Sputtered Neutral Particle Mass Spectrometry (SNMS)
6.8 Ion Beam Imaging Techniques
6.8.1 Field Ion Microscopy
6.8.2 Ion Microscopy with Stationary Beam
6.8.3 Scanning Ion Microscopy
7. Special Ion Beam Applications in Materials Analysis Problems
7.1 Functional Thin Films and Layers
7.1.1 Direct Study of Diffusion Pricesses in Amorphous Thin Layer Systems
7.1.2 Nanoanalytical Investigations of Tunnelmagnetoresistance Layers
7.2 Ion Beam Analysis in Art and Archeometry
7.3 Special Applications in Life Sciences
Index
7. Special Ion Beam Applications in Materials Analysis Problems
7.1 Functional Thin Films and Layers
7.1.1 Direct Study of Diffusion Pricesses in Amorphous Thin Layer Systems
7.1.2 Nanoanalytical Investigations of Tunnelmagnetoresistance Layers
7.2 Ion Beam Analysis in Art and Archeometry
7.3 Special Applications in Life Sciences
Index
Bernd Schmidt received his PhD in Physics at the State University of St. Petersburg (Russia) in 1976. Since 1994 he has been head of the Process Technology Division at the Helmholtz-Zentrum Dresden-Rossendorf, Germany. His research interests include semiconductor technology as well as ion implantation and the synthesis of nanostructures. He is author of the specialist book "Silicon Sensors" (1986) and of more than 150 refereed journal papers.
Klaus Wetzig received his PhD (1967) and postdoctoral (1973) degrees in Physics at the TU Dresden, Germany. From 1992 until his retirement in 2006 he was full professor of Materials Analysis at the TU Dresden and research director at the Leibniz Institute for Solid State and Materials Research Dresden (IFW). His research interests include materials analysis, nanostructures and particle-solid interactions. He is author of several specialist books and of more than 300 refereed journal papers.
Über den Autor
rn Bernd Schmidt received his PhD in Physics at the State University of St. Petersburg (Russia) in 1976. Since 1994 he has been head of the Process Technology Division at the Helmholtz-Zentrum Dresden-Rossendorf, Germany. His research interests include semiconductor technology as well as ion implantation and the synthesis of nanostructures. He is author of the specialist book "Silicon Sensors" (1986) and of more than 150 refereed journal papers.
rn
rn Klaus Wetzig received his PhD (1967) and postdoctoral (1973) degrees in Physics at the TU Dresden, Germany. From 1992 until his retirement in 2006 he was full professor of Materials Analysis at the TU Dresden and research director at the Leibniz Institute for Solid State and Materials Research Dresden (IFW). His research interests include materials analysis, nanostructures and particle-solid interactions. He is author of several specialist books and of more than 300 refereed journal papers.
rn
Inhaltsverzeichnis
Preface1. Introduction2. Fundamentals3. Ion Beam Technology3.1 Principles of Ion Accelerators3.1.1 Low Energy Ion Accelerators (Ion Implanters)3.1.2 High Energy Ion Accelerators3.2 Ion Sources3.2.1 Hot Filament (Hot Cathode) Ion Sources3.2.2 Cold Cathode Ion Source (Penning Ion Source)3.2.3 High Frequency (RF) Ion Source3.2.4 Duoplasmatron Ion Source3.2.5 Ion Sources for Electrostatic Accelerators3.2.6 Cesium Sputtering Ion Sources3.2.7 Field-Evaporation or Liquid Metal Ion Sources (LMIS)3.2.8 Beam Extraction from Ion Sources3.3 Ion Acceleration3.4 Ion Beam Handling3.4.1 Ion Mass Separation3.4.2 Ion Beam Focusing3.4.3 Ion Beam Scanning3.4.4 Ion Beam Current Measurement3.4.5 Ion Detection (Detectors, Spectrometers)3.5 Ion Implantation Systems3.5.1 Common Low Energy Beam Line Implanters3.5.2 Specialized Low Energy Beam Line Implanters3.5.3 High Energy Beam Line Implanters3.5.4 Plasma Based Ion Implanters (PBII)3.6 Electrostatic Ion Accelerator Systems3.6.1 Single-Stage Electrostatic Accelerators3.6.2 Two-Stage Electrostatic Accelerators3.7 Focused Ion Beam Systems3.7.1 Low Energy Focused Ion Beams3.7.2 High Energy Focused Ion Beams4. Materials Processing4.1 Ion Irradiation and Damage Annealing4.2 Ion Implantation into Semiconductors4.2.1 Ion Implantation into Silicon4.2.1.1 Advanced CMOS Technology4.2.1.2 Defect Engineering and Epi-Layer Replacing in High Power Devices4.2.1.3 Silicon Detector and Sensor Technology4.2.2 Ion Implantation into Germanium4.2.3 Ion Implantation into Compound Semiconductors4.2.3.1 III-V Semiconductors4.2.3.2 Group III-Nitride Materials4.2.3.3 Silicon Carbide4.3 Ion Beam Synthesis of New Phases in Solids4.3.1 Buried Insulating Layers in Silcon4.3.2 Ion Beam Synthesized Silicide Layers4.3.3 Ion Beam Synthesis of Nanocrystals in Insulators4.4 Ion Beam Mixing of Interfaces4.5 Ion Beam Slicing of Thin Layers (Smart-Cut for SOI and Solar Cells)4.6 Ion Beam Erosion, Sputtering and Surface Patterning (Ripples)4.7 Ion Beam Shaping of Nanomaterials4.8 Ion Beam Processing of other Materials (Metals, Insulators, Polymers...)4.8.1 Ion Implantation of Metals4.8.2 Ion Implantation into Polymers4.8.3 Ion Implantation into Insulating Optical Materials5. Ion Beam Preparation of Materials5.1 Displacement of Target Atoms by Sputtering5.2 Effects on Sputtering Yield5.2.1 Ion Energy and Ion Atomic Number5.2.2 Ion Incident Direction5.2.3 Selective Sputtering5.2.4 Targert Material5.2.5 Preferential Sputtering5.3 Ion Beam Induced Target Modifications5.3.1 Ion Beam Cleaning and Etching5.3.2 Ion Beam Induced Material Deposition5.3.3 Ion Beam Depth Profiling5.3.4 Ion Beam Cutting5.3.5 Ion Beam Thinning5.4 Focus Ion Beam (FIB) Preparation5.4.1 FIB Induced Cross Section Preparation 5.4.2 FIB Induced Thin Film Preparation5.4.3 Limiting Effects at FIB Preparation6. Ion Beam Analysis of Materials6.1 Ion- Solid State Interactions6.2 Ion Beam Analytical Techniques - a Survey6.3 Ion Beam Scattering Techniques6.3.1 Rutherford Backscattering (RBS)6.3.2 Medium Energy Ion Scattering (MEIS)6.3.3 Elastic Recoil Detection Analysis (ERDA)6.4 Ion Beam Induced Photon Emission6.4.1 Particle Induced X-Ray Emission (PIXE)6.4.2 Particle Induced ¿-Ray Emission (PIGE)6.5 Nuclear Reaction Analysis (NRA)6.6 Ion Beam Induced Light and Electron Emission6.7 Secondary Ion Emission6.7.1 Dynamic Secondary Ion Mass Spectrometry (Dynamic SIMS)6.7.2 Static Secondary Ion Mass Spectrometry (Static SIMS)6.7.3 Sputtered Neutral Particle Mass Spectrometry (SNMS)6.8 Ion Beam Imaging Techniques6.8.1 Field Ion Microscopy6.8.2 Ion Microscopy with Stationary Beam6.8.3 Scanning Ion Microscopy7. Special Ion Beam Applications in Materials Analysis Problems7.1 Functional Thin Films and Layers7.1.1 Direct Study of Diffusion Pricesses in Amorphous Thin Layer Systems7.1.2 Nanoanalytical Investigations of Tunnelmagnetoresistance Layers7.2 Ion Beam Analysis in Art and Archeometry7.3 Special Applications in Life SciencesIndex7. Special Ion Beam Applications in Materials Analysis Problems7.1 Functional Thin Films and Layers7.1.1 Direct Study of Diffusion Pricesses in Amorphous Thin Layer Systems7.1.2 Nanoanalytical Investigations of Tunnelmagnetoresistance Layers7.2 Ion Beam Analysis in Art and Archeometry7.3 Special Applications in Life SciencesIndex
Klappentext
A comprehensive review of ion beam application in modern materials research is provided, including the basics of ion beam physics and technology. The physics of ion-solid interactions for ion implantation, ion beam synthesis, sputtering and nano-patterning is treated in detail. Its applications in materials research, development and analysis, developments of special techniques and interaction mechanisms of ion beams with solid state matter result in the optimization of new material properties, which are discussed thoroughly. Solid-state properties optimization for functional materials such as doped semiconductors and metal layers for nano-electronics, metal alloys, and nano-patterned surfaces is demonstrated. The ion beam is an important tool for both materials processing and analysis. Researchers engaged in solid-state physics and materials research, engineers and technologists in the field of modern functional materials will welcome this text.
Offers comprehensive treatment of the use of ion beams in material science research
Includes numerous tables, graphs and illustrations that amplify the text
Provides optimization strategies for solid-state properties of functional materials
